Nanostructural and Plasmonic Features of KDB-3 Silicon Modified by High-Temperature Manganese Diffusion
Abstract
This study explores the nanostructural, morphological, and plasmonic modifications induced by high-temperature manganese diffusion into monocrystalline silicon of the KDB-3 grade. To determine structural, phase, and plasmonic changes arising from manganese diffusion in silicon. The study employed a comprehensive suite of modern analysis techniques, including X-ray diffraction (XRD), Raman spectroscopy, impedance spectroscopy, scanning electron microscopy with energy-dispersive spectroscopy (SEM/EDS), and nitrogen adsorption-based BET/DFT porosimetry. Results revealed significant amorphization, formation of Mn₅Si₃ and SiB₆ phases, a rise in specific resistivity, and a decline in carrier mobility. Raman and impedance analyses identified localized surface plasmon resonance (LSPR) manifestations within 40–70 kHz and at 570–600 cm⁻¹. BET/DFT analysis confirmed mesoporosity with pore sizes between 2–5 nm and a specific surface area reaching 23 m²/g. The study contributes novel insights into the formation of plasmonic-active regions within transition-metal-modified silicon, linking plasmonic effects to specific nanostructural and phase alterations. Findings suggest potential applications of Mn-diffused KDB-3 silicon in sensor platforms, nanophotonics, and spintronic devices. Further investigations are required to explore broader temperature ranges, long-term stability, and in-depth LSPR characterization via advanced photonic correlation techniques.
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